LMP3825ETF
Features
- -30V/-0.5A, RDS(ON)<2500mΩ@VGS=-4.5V
- -30V/-0.2A, RDS(ON)<2900mΩ@VGS=-2.5V
- -30V/-0.1A, RDS(ON)<5000mΩ@VGS=-1.8V
- Low-Voltage Operation
- High-Speed Circuits
- ESD Protection
- DFN1006-3L package design
Product Description
LMP3825ETF, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Drivers, Relays, Solenoids, Lamps, Hammers
- Battery Operated Systems
- Power Supply Converter Circuits
- Load/Power Switching Smart Phones, Pagers
Pin Configuration
LMP3825ETF (DFN1006-3L)
Description
Gate
Source
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number
P/N
LMP3825ETF...
