LMP3825ETF - 30V P-Channel MOSFET

General Description

uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

-30V/-0.5A, RDS(ON).

LMP3825ETF 30v p-channel mosfet by LFC semi - Datasheet Preview

Datasheet Details

Part number	LMP3825ETF
Manufacturer	LFC semi
File Size	731.01 KB
Description	30V P-Channel MOSFET
Datasheet	LMP3825ETF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMP3825ETF Rev. 1.0 LMP3825ETF 30V P-Channel MOSFET Features  -30V/-0.5A, RDS(ON)<2500mΩ@VGS=-4.5V  -30V/-0.2A, RDS(ON)<2900mΩ@VGS=-2.5V  -30V/-0.1A, RDS(ON)<5000mΩ@VGS=-1.8V  Low-Voltage Operation  High-Speed Circuits  ESD Protection  DFN1006-3L package design Product Description LMP3825ETF, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.