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LMP2145X5F - 20V P-Channel Enhancement MOSFET

General Description

LMP2145, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Portable Equipment Battery Powered System Net Working System Pin Configuration LMP2145X5F (SOT-323) Top Views Pin Description 1 Gate 2 So

Key Features

  • -20V/-4A, RDS(ON) =55mΩ@VGS = -4.5V.
  • -20V/-3A, RDS(ON) =75mΩ@VGS = -2.5V.
  • -20V/-2A, RDS(ON) =100mΩ@VGS = -1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability These devices are particularly suited for low Voltage power management, such as smart Phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount.

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Datasheet Details

Part number LMP2145X5F
Manufacturer LFC semi
File Size 672.10 KB
Description 20V P-Channel Enhancement MOSFET
Datasheet download datasheet LMP2145X5F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMP2145X5F 20V P-Channel Enhancement MOSFET LMP2145X5F Rev. 1.0 Features ● -20V/-4A, RDS(ON) =55mΩ@VGS = -4.5V ● -20V/-3A, RDS(ON) =75mΩ@VGS = -2.5V ● -20V/-2A, RDS(ON) =100mΩ@VGS = -1.8V ● Super high density cell design for extremely low RDS (ON) ● Exceptional on-resistance and maximum DC current capability These devices are particularly suited for low Voltage power management, such as smart Phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Product Description LMP2145, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.