LMNDS04N15
Features
- 150V,4A, RDS(ON) =65mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- SOP-8 package design
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Applications
- Notebook
- Load Switch
- LED Applications
Pin Configuration LMNDS04N15SF (SOP-8)
Pin
Description
Pin
Description
Source
Drain
Source
Drain
Source
Drain
Gate
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
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