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LMNDD10N20 - 200V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 200V,8A, RDS(ON) =400mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • VGS Guaranteed ±25V.
  • Green Device Available.
  • TO-252-2L package design These devices are well suited for high efficiency fast switching.

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Datasheet Details

Part number LMNDD10N20
Manufacturer LFC semi
File Size 388.16 KB
Description 200V N-Channel MOSFET
Datasheet download datasheet LMNDD10N20 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMNDD10N20 Rev. 1.0 LMNDD10N20 200V N-Channel MOSFET Features ● 200V,8A, RDS(ON) =400mΩ@VGS = 10V ● Improved dv/dt capability ● Fast switching ● VGS Guaranteed ±25V ● Green Device Available ● TO-252-2L package design These devices are well suited for high efficiency fast switching applications. Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.