LMNDD10N20
Features
- 200V,8A, RDS(ON) =400mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- VGS Guaranteed ±25V
- Green Device Available
- TO-252-2L package design
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Applications
- Networking
- Load Switch
- LED Applications
- Li Battery Pack Applications
Pin Configuration LMNDD10N20DF (TO252-2L)
Description
Gate
Source Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number
P/N
LMNDD10N20DF LMNDD10N20
PKG Code D
Pb Free Code F
Package TO-252-2L
Rev. 1.0
Quantity Reel 2500...
