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LMNBSS123
Rev. 1.0
LMNBSS123 100V N-Channel Enhancement Mode MOSFET
Features
● 100V, 0.17A, RDS(ON) =6.0Ω@VGS = 10V ● SOT-23 package design ● Lead(Pb)-Free
Product Description The LMNBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.
Applications
● DC to DC Converter ● Cellular & PCMCIA Card ● Cordless Telephone ● Power Management in Portable and Battery
etc.
These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
Pin Configuration LMNBSS123JZF (SOT-23)
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Pin
Description
1
Gate
2
Source
3
Drain
LMNBSS123
Notice: The information in this document is subject to change without notice.
1
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