LMN6184DF
Features
- RDS(ON)=92mΩ@VGS=10V
- RDS(ON)=100mΩ@VGS=4.5V
- Improved dv/dt capability
- Fast switching
- 100% EAS guaranteed. been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has
Applications
- Motor Drive
- Power Tools
- LED Lighting
Pin Configuration
LMN6184DF (TO-252)
Transparent top view
Pin
Description
Gate
Drain
Source
Notice: The information in this document is subject to change without notice.
Ordering Information
Part Number LMN6184DF
P/N LMN4184
Rev. 1.0
Ordering Information
PKG code
Pb Free code
Package TO-252
Quantity 2500 PCS
Marking Information
Part Marking
Part...
