Datasheet4U Logo Datasheet4U.com

LMN6184DF - 60V N-Channel Enhancement Mode MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Motor Drive Power Tools LED Lighting Pin Configuration LMN6184DF (TO-252) Transparent top view Pin Description 1 Gate 2 Drain 3 So

Key Features

  • RDS(ON)=92mΩ@VGS=10V.
  • RDS(ON)=100mΩ@VGS=4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed. been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

📥 Download Datasheet

Datasheet Details

Part number LMN6184DF
Manufacturer LFC semi
File Size 652.56 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMN6184DF Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LMN1A SILICON RECTIFIER DIODES EIC
LMN1B SILICON RECTIFIER DIODES EIC
LMN1D SILICON RECTIFIER DIODES EIC
LMN1G SILICON RECTIFIER DIODES EIC
LMN1J SILICON RECTIFIER DIODES EIC

Other Datasheets by LFC semi

Part Number Description
LMN02N15TSF 150V N-Channel MOSFET
LMN0910P 100V N-Channel MOSFET
LMN1072KAF 20V N-Channel Enhancement Mode MOSFET
LMN1072KJZF 20V N-Channel Enhancement Mode MOSFET
LMN1072KTFF 20V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LMN6184DF Rev. 1.0 LMN6184DF 60V N-Channel Enhancement Mode MOSFET Features  RDS(ON)=92mΩ@VGS=10V  RDS(ON)=100mΩ@VGS=4.5V  Improved dv/dt capability  Fast switching  100% EAS guaranteed. been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.