LMN4184JZF
Features
- 40V, 3.6A, RDS(ON)=58mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- Green Device Available resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state
Applications
- MB / VGA / Vcore
- Load Switch
- Hand-Held instrument
Pin Configuration
LMN4184JZF (SOT-23)
Transparent top view
Pin
Description
Gate
Source
Drain
Notice: The information in this document is subject to change without notice.
Ordering Information
Part Number LMN4184JZF
P/N LMN4184
Rev. 1.0
Ordering Information
PKG code
Pb Free code
Package SOT-23
Quantity 3000 PCS
Marking Information
Part Marking S4XWM
Marking...
