LMN3368AXF
Features
- RDS(ON) =6mΩ @ VGS=10V
- RDS(ON) =9.8mΩ @ VGS=4.5V
- DFN5x6-8L Package
Product Description
The N-Channel enhancement mode power field effect transistor is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
The device is well suited for high efficiency fast switching applications.
Applications
- MB / VGA / Vcore
- POL
- SMPS 2nd SR
Pin Configuration
LMN3368AXF (DFN5x6-8L)
PIN 1,2,3
4 5,6,7,8
Description
Source Gate Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information Part Number
Part Marking
Package
3368AXF
DFN5x6-8L
Quantity 3000 PCS
Rev. 1.0
Marking Information Part Marking 3368AXF
Package Code 1 is X for SOP-8
Green Level:
2 is F for Ro HS pliant and Halogen...
