LMN2730EX7F
Features
- 20V, 700m A, RDS(ON)=400mΩ@VGS=4.5V
- Fast switching
- Suit for 1.5V Gate Drive Applications
- Green Device Available
- SOT-563 package design withstand high energy pulse in the avalanche and mutation mode.
LMN2730 is well suited for high efficiency fast switching applications.
Product Description
LMN2730, Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and
Applications
- Notebook
- Load Switch
- Networking
- Hand-Held Instruments
Pin Configuration
LMN2730EX7F (SOT-563)
Description
Source1
Gate1
Drain2
Source2
Gate2
Drain1
Notice: The information in this document is subject to change without notice.
Ordering Information
LMN2730E LFC P/N
Marking Information
0 Part Number
Rev. 1.0
X7 PKG code
F Pb Free code
XW LFC code
Part Number...
