LMN2130JZF
Features
- 20V/5.4A, RDS(ON)=30mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- SOT-23 package design
Product Description
LMN2130JZF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Portable Equipment
- Battery Powered System
- Net Working System
Pin Configuration
LMN2130JZF(SOT-23)
Description
Gate
Source
Drain
LMP2130JZF
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMP1073KJZF
P/N LMN2130
Ordering Information
PKG code
Pb Free code
Rev....
