LM3414S
Features
- 20V/5.8A, RDS(ON)=25mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- SOT-23 package design
Product Description
LMN3414S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
Applications
- Portable Equipment
- Battery Powered System
- Net Working System
Pin Configuration
LMN3414SZF(SOT-23)
Description
Gate
Source
Drain
LMN3414S
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMN3414SZF
P/N LMN3414S
LMN3414S
Rev. 1.0
Ordering Information
PKG code
Pb Free code
Package...
