Download the KRC685T datasheet PDF.
This datasheet also covers the KRC681T variant, as both devices belong to the same (krc681t - krc686t) epitaxial planar npn transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ. ) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C A F
KRC681T~KRC686T.
Full PDF Text Transcription for KRC685T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
KRC685T. For precise diagrams, and layout, please refer to the original PDF.
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) ...
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base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C A F KRC681T~KRC686T EPITAXIAL PLANAR NPN TRANSISTOR E B 1 5 DIM MILLIMETERS _ 0.2 A 2.9 + B C D E F G H I J K L 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 G 2 3 4 G J C R1 5 4 1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5.
KRC685T Datasheet
