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STN2NF10 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 100V.
  • ID = 2.4 A (VGS = 10V).
  • RDS(ON) ＜ 260mΩ (VGS = 10V) D G S SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drain Current Power Dissipation Single pulse avalanche energy Tc=25℃ (Note.1) Pea.

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SMD Type N-Channel MOSFET STN2NF10 (KTN2NF10) MOSFET ■ Features ● VDS (V) = 100V ● ID = 2.4 A (VGS = 10V) ● RDS(ON) ＜ 260mΩ (VGS = 10V) D G S SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drain Current Power Dissipation Single pulse avalanche energy Tc=25℃ (Note.1) Peak diode recovery voltage slope (Note.2) Thermal Resistance.Junction- to-Ambient Junction Temperature t < 10sec t > 10sec Storage Temperature Range Note.1: IAS = 2.4A, VDD = 30V, Rg=4.7Ω, starting Tj = 25°C Note.