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SI9410DY - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID = 7 A (VGS = 10V).
  • RDS(ON) ＜ 30mΩ (VGS = 10V).
  • RDS(ON) ＜ 40mΩ (VGS = 5V).
  • RDS(ON) ＜ 50mΩ (VGS = 4.5V) SOP-8 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.04 0.21 -0.02.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Pulsed Drain Current Power Dissipation (Note.1) Thermal Resistance. Junction- to-Ambient Juncti.

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SMD Type N-Channel MOSFET SI9410DY (KI9410DY) ■ Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜ 30mΩ (VGS = 10V) ● RDS(ON) ＜ 40mΩ (VGS = 5V) ● RDS(ON) ＜ 50mΩ (VGS = 4.5V) SOP-8 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.04 0.21 -0.02 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Pulsed Drain Current Power Dissipation (Note.1) Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ TA=70℃ Note.1: Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 30 ±20 7 5.8 30 2.5 1.6 50 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.