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SI7898DP - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 150V.
  • ID = 4.8 A (VGS = 10V) D.
  • RDS(ON) ＜ 87mΩ (VGS = 10V).
  • RDS(ON) ＜ 98 mΩ (VGS = 4.5V) G S PowerPAK ® SO-8 (DFN5X6) 6.15 mm D 8 D 7 D 6 D 5 S 1 S 5.15 mm 2 S 3 G 4 Bottom View.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ Ta=70℃ Pulsed Drain Current Avalanche Current L=0.1mH Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance. Junction- to-Ambient Thermal Re.

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SMD Type N-Channel MOSFET SI7898DP (KI7898DP) MOSFET ■ Features ● VDS (V) = 150V ● ID = 4.8 A (VGS = 10V) D ● RDS(ON) ＜ 87mΩ (VGS = 10V) ● RDS(ON) ＜ 98 mΩ (VGS = 4.5V) G S PowerPAK ® SO-8 (DFN5X6) 6.15 mm D 8 D 7 D 6 D 5 S 1 S 5.15 mm 2 S 3 G 4 Bottom View ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ Ta=70℃ Pulsed Drain Current Avalanche Current L=0.1mH Power Dissipation Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Soldering Recommendations (Peak Temperature) Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM IAS PD RthJA RthJC TJ Tstg 10s Steady State 150 ±20 4.8 3 3.8 2.4 25 10 5 1.9 3.2 1.