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RUE003N02 - N-Channel MOSFET

Features

  • VDS (V) = 20V.
  • ID = 0.3 A.
  • RDS(ON) ＜ 1Ω (VGS = 4V).
  • RDS(ON) ＜ 1.2Ω (VGS = 2.5V).
  • RDS(ON) ＜ 1.4Ω (VGS = 1.8V).
  • Fast switching speed. Drain BODY Gate DIODE ESD.

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SMD Type MOSFET N-Channel MOSFET RUE003N02 SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 U nit: m m 0.15±0.05 0.55 (REF.) 0.36±0.1 ■ Features ● VDS (V) = 20V ● ID = 0.3 A ● RDS(ON) ＜ 1Ω (VGS = 4V) ● RDS(ON) ＜ 1.2Ω (VGS = 2.5V) ● RDS(ON) ＜ 1.4Ω (VGS = 1.8V) ● Fast switching speed. Drain BODY Gate DIODE ESD PROTECTION DIODE Source 2 1 +0.15 1.6 -0.15 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 +0.1 0.8 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ±8 Continuous Drain Current Pulsed Drain Current (Note.1) ID 300 mA IDM 600 Power Dissipation PD 150 mW Thermal Resistance.
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