Datasheet4U Logo Datasheet4U.com

RB500V-40 - Schottky barrier diode

Features

  • Small surface mounting type. (UMD2) Low IR. (IR = 70 nA Typ. ) High reliability. SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.050.3 -0.05 +0.11.3 -0.1 2.6+0.1 -0.1 0.475 0.375 1.0max +0.050.1 -0.02 Absolute M axim um R atings T a = 25 C h a ra c te ris tic Peak reverse voltage DC reverse Volatge M ean rectifying current Peak forwrad surge current.
  • Junction tem perature Storage tem perature.
  • 60Hz for 1 Sym bol VRM VR Io IFSM Tj T stg Lim its 45 40 0.1 1 125 -40 to +125 U n i.

📥 Download Datasheet

📁 Similar Datasheet

  • RB500V-40 - SCHOTTKY BARRIER DIODE (JCET)
  • RB500V-40 - Schottky barrier diode (Rohm)
  • RB500V-40 - Schottky Barrier Diode (GME)
  • RB500V-40 - Low VF SMD Schottky Barrier Diode (Taiwan Semiconductor)
  • RB500V-40 - Schottky Diodes (LGE)
  • RB500V-40 - Schottky Barrier Rectifier (MCC)
  • RB500V-40 - SURFACE MOUNT SCHOTTKY DIODES (Pan Jit International)
  • RB500V-40 - SCHOTTKY DIODES (RECTRON)
  • RB500V-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE (SEMTECH)
  • RB500V-40 - Schottky Diode (TRANSYS)
Other Datasheets by Kexin

Full PDF Text Transcription

Click to expand full text
SMD Type Schottky barrier diode RB500V-40 Diodes Features Small surface mounting type.(UMD2) Low IR.(IR = 70 nA Typ.) High reliability. SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.050.3 -0.05 +0.11.3 -0.1 2.6+0.1 -0.1 0.475 0.375 1.0max +0.050.1 -0.02 Absolute M axim um R atings T a = 25 C h a ra c te ris tic Peak reverse voltage DC reverse Volatge M ean rectifying current Peak forwrad surge current* Junction tem perature Storage tem perature *60Hz for 1 Sym bol VRM VR Io IFSM Tj T stg Lim its 45 40 0.1 1 125 -40 to +125 U n it V V A A Electrical Characteristics Ta = 25 Characteristic Forward Voltage Reverse current Capacitance between terminals Symbol Condition Min Typ Max Unit VF IF = 10 mA 0.45 V IR VR = 10 V 1A CT VR = 10 V, f = 1 MHz 6.0 pF www.kexin.
Published: |