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NDT2955 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-60V.
  • ID =-2.5 A (VGS =-10V).
  • RDS(ON) ＜ 300mΩ (VGS =-10V).
  • RDS(ON) ＜ 500mΩ (VGS =-4.5V) D G D S SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Pulsed Drain Current (Note.1) Power Dissipation (No.

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SMD Type MOSFET P-Channel MOSFET NDT2955 (KDT2955) ■ Features ● VDS (V) =-60V ● ID =-2.5 A (VGS =-10V) ● RDS(ON) ＜ 300mΩ (VGS =-10V) ● RDS(ON) ＜ 500mΩ (VGS =-4.5V) D G D S SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 1 2 3 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Pulsed Drain Current (Note.1) Power Dissipation (Note.2) (Note.3) Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Note.