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MCH6405 - N-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) = 20V.
  • ID = 5.0 A.
  • RDS(ON) ＜ 41mΩ (VGS = 4V).
  • RDS(ON) ＜ 54mΩ (VGS = 2.5V) ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 +0.1 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0-0.1 +0.1 0.68 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipatio.

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SMD Type N-Channel Enhancement MOSFET MCH6405 (KCH6405) MOSFET ■ Features ● VDS (V) = 20V ● ID = 5.0 A ● RDS(ON) ＜ 41mΩ (VGS = 4V) ● RDS(ON) ＜ 54mΩ (VGS = 2.5V) ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 +0.1 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0-0.1 +0.1 0.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Storage Temperature Range Note.1 :PW ≤ 10 us, duty cycle ≤ 1% Symbol Rating Unit VDS 20 V VGS ±10 ID 5 A IDP 20 PD 1.5 W TJ 150 ℃ Tstg -55 to 150 www.kexin.com.