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KXU05N25 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 250V.
  • RDS(ON) ≤ 1Ω (VGS = 10V) N-Channel MOSFET KXU05N25 MOSFET 3.80 +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 1 2 2.3 4.60+0.15 -0.15 3 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1. Gate 2. Drain 3. Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate source voltage Drain Current.
  • Contin.

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SMD Type ■ Features ● VDS (V) = 250V ● RDS(ON) ≤ 1Ω (VGS = 10V) N-Channel MOSFET KXU05N25 MOSFET 3.80 +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 1 2 2.3 4.60+0.15 -0.15 3 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1. Gate 2. Drain 3. Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate source voltage Drain Current — Continuous Drain Current - Pulsed (Note 2) Power dissipation @ TA = 25℃ (Note 1) - Derate above 25℃ Thermal resistance, junction - ambient Operating and storage temperature Symbol VDSS VGS ID IDM PD RthJA Tj , Tstg Rating 250 ±20 5 15 50 0.32 100 -55 to +150 Unit V V A A W W/℃ ℃/W ℃ Note:1.