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KX90N06 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 70V.
  • ID = 80 A (VGS = 10V).
  • RDS(ON) ＜ 7.2mΩ (VGS = 10V).
  • Ultra Low On-Resistance N-Channel MOSFET KX90N06 TO-220 9.90 ± 0.20 (8.70) ø3.60 ± 0.10 (1.70) 1.30 ± 0.10 9.20 ± 0.20 (1.46) (45 ) 13.08 ± 0.20 (1.00) 1.27 ± 0.10 1.52 ± 0.10 123 2.54TYP [2.54 ± 0.20 ] 0.80 ± 0.10 2.54TYP [2.54 ± 0.20 ] 10.00 ± 0.20 (3.00) (3.70) 15.90 ± 0.20 18.95MAX. 2.80 ± 0.10 10.08 ± 0.30 MOSFET 4.50 ± 0.20 1.30 +0.10.
  • 0.05 0.50 +0.10.
  • 0.05 2.40.

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DIP Type ■ Features ● VDS (V) = 70V ● ID = 80 A (VGS = 10V) ● RDS(ON) ＜ 7.2mΩ (VGS = 10V) ● Ultra Low On-Resistance N-Channel MOSFET KX90N06 TO-220 9.90 ± 0.20 (8.70) ø3.60 ± 0.10 (1.70) 1.30 ± 0.10 9.20 ± 0.20 (1.46) (45 ) 13.08 ± 0.20 (1.00) 1.27 ± 0.10 1.52 ± 0.10 123 2.54TYP [2.54 ± 0.20 ] 0.80 ± 0.10 2.54TYP [2.54 ± 0.20 ] 10.00 ± 0.20 (3.00) (3.70) 15.90 ± 0.20 18.95MAX. 2.80 ± 0.10 10.08 ± 0.30 MOSFET 4.50 ± 0.20 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.40 ± 0.20 1 GATE 2 DRAIN 3 SOURCE ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery Voltage Thermal Resistance.