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KX3N80 - N-Channel MOSFET

Key Features

  • VDS (V) = 800V.
  • ID = 3 A (VGS = 10V).
  • RDS(ON) ＜ 5Ω (VGS = 10V).
  • Low gate charge ( typical 15 nC).
  • Low Crss ( typical 7.0 pF).
  • Fast switching D G S 13.08 ± 0.20 (1.00) 9.20 ± 0.20 (1.46) (45 ) (3.00) (3.70) 15.90 ± 0.20 18.95MAX. 10.08 ± 0.30 1.27 ± 0.10 1.52 ± 0.10 123 2.54TYP [2.54 ± 0.20 ] 0.80 ± 0.10 2.54TYP [2.54 ± 0.20 ] 10.00 ± 0.20 0.50 +0.10.
  • 0.05 2.40 ± 0.20 1 GATE 2 DRAIN 3 SOURCE.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Dra.

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DIP Type MOSFET N-Channel MOSFET KX3N80 TO-220 9.90 ± 0.20 (8.70) ø3.60 ± 0.10 4.50 ± 0.20 1.30 +0.10 –0.05 2.80 ± 0.10 (1.70) 1.30 ± 0.10 ■ Features ● VDS (V) = 800V ● ID = 3 A (VGS = 10V) ● RDS(ON) ＜ 5Ω (VGS = 10V) ● Low gate charge ( typical 15 nC) ● Low Crss ( typical 7.0 pF) ● Fast switching D G S 13.08 ± 0.20 (1.00) 9.20 ± 0.20 (1.46) (45 ) (3.00) (3.70) 15.90 ± 0.20 18.95MAX. 10.08 ± 0.30 1.27 ± 0.10 1.52 ± 0.10 123 2.54TYP [2.54 ± 0.20 ] 0.80 ± 0.10 2.54TYP [2.54 ± 0.20 ] 10.00 ± 0.20 0.50 +0.10 –0.05 2.40 ± 0.