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KX1N60DS - N-Channel Power MOSFET

Key Features

  • s.
  • ESD improved capability.
  • Depletion mode.
  • dv/dt rated.
  • Pb-free lead plating;ROHS compliant.
  • Halogen Free +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±20 Continuous Drain Curr.

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SMD Type N-Channel Power MOSFET KX1N60DS ■ Features ● ESD improved capability ● Depletion mode ● dv/dt rated ● Pb-free lead plating;ROHS compliant ● Halogen Free +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current (Note.1) Tc = 70℃ 30 ID 24 IDM 120 Power Dissipation PD 0.5 Gate Source ESD(HBM-C=100pF,R=1.5KΩ) Peak Diode Recovery dv/dt (Note.2) Thermal Resistance.