Datasheet4U Logo Datasheet4U.com

KSS138E - N-Channel MOSFET

Features

  • s.
  • VDS (V) = 50V.
  • ID = 300 mA (VGS = 10V).
  • RDS(ON) < 2.5Ω (VGS = 10V).
  • RDS(ON) < 3.5Ω (VGS =2.5V).
  • Low On-Resistance.
  • ESD Rating: 1.5KV HBM.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage RGS≤ 20KΩ Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance. Junction- to-Ambient Junction Temperature Storage Temperature Range SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 0.4 Unit: mm +0.2 1.6 -0.1 +0.2 2.8.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOSFET N-Channel MOSFET BSS138E (KSS138E) ■ Features ● VDS (V) = 50V ● ID = 300 mA (VGS = 10V) ● RDS(ON) < 2.5Ω (VGS = 10V) ● RDS(ON) < 3.5Ω (VGS =2.5V) ● Low On-Resistance ● ESD Rating: 1.5KV HBM ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage RGS≤ 20KΩ Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 0.4 Unit: mm +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 Symbol VDS VDG VGS ID PD RthJA TJ Tstg Rating 50 50 ±20 300 300 417 150 -55 to 150 Unit V mA mW ℃/W ℃ 0-0.1 +0.1 0.68 -0.1 +0.2 1.1 -0.1 0.15 +0.02 -0.02 1. Gate 2. Source 3.
Published: |