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KRF7607 - Power MOSFET

Key Features

  • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TA = 70 Pulsed Drain Current.
  • 1 Power Dissipation Ta = 25 Power Dissipation Ta = 70 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Junction-to-Ambient.
  • Surface mounte.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type HEXFET Power MOSFET KRF7607 Features Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Ta = 70 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Junction-to-Ambient * * Surface mounted on FR-4 board, t 10sec. Symbol ID ID IDM PD VGS TJ, TSTG R JA Rating 20 6.5 5.2 1.8 1.2 0.014 12 -55 to + 150 70 Unit A W W/ V /W www.kexin.com.