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KRF7530 - Power MOSFET

Key Features

  • Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage VDS Continuous Drain Current, VGS @ 4.5V,Ta = 25 ID Continuous Drain Current, VGS @ 4.5V,TA = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation Ta = 25 PD Power Dissipation Ta = 70 PD Linear Derating Factor Single Pulse Avalanche Energy.
  • 2 EAS Gate-to-Source V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type HEXFET Power MOSFET KRF7530 Features Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage VDS Continuous Drain Current, VGS @ 4.5V,Ta = 25 ID Continuous Drain Current, VGS @ 4.5V,TA = 70 ID Pulsed Drain Current*1 IDM Power Dissipation Ta = 25 PD Power Dissipation Ta = 70 PD Linear Derating Factor Single Pulse Avalanche Energy *2 EAS Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Junction-to-Ambient *1 R JA 1* Surface mounted on FR-4 board, t 10sec. *2 Starting TJ = 25 , L = 2.6mH,RG = 25 , IAS = 5.0A. Rating 20 5.4 4.3 40 1.3 0.