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KI50N06DFN - N-Channel MOSFET

Key Features

  • ƽ VDS (V) = 60 V ƽ IDMAX = 50 A ƽ RDS(ON)=10.8mȍ(max. ) @ VGS=10V ƽ RDS(ON)=13.5mȍ(max. ) @ VGS=4.5V DFN5x6-8(PDFNWB5x6-8L) S D S D S D G D Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted) Parameter Symbol Rating Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current TC=25ć 50 ID TC=100ć 32 Continuous Drain Current TA=25ć 10 ID TA=100ć 8 Pulsed Drain Current (Note 1) TC=100ć IDM 200 Diode Continuous Forward Current TC=25ć.

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SMD Type N-Channel MOSFET KI50N06DFN TraMnOsiSsFtoErsT Ƶ Features ƽ VDS (V) = 60 V ƽ IDMAX = 50 A ƽ RDS(ON)=10.8mȍ(max.) @ VGS=10V ƽ RDS(ON)=13.5mȍ(max.) @ VGS=4.5V DFN5x6-8(PDFNWB5x6-8L) S D S D S D G D Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted) Parameter Symbol Rating Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current TC=25ć 50 ID TC=100ć 32 Continuous Drain Current TA=25ć 10 ID TA=100ć 8 Pulsed Drain Current (Note 1) TC=100ć IDM 200 Diode Continuous Forward Current TC=25ć IS 25 Avalanche Current, Single pulse (L=0.5mH) (Note 2) IAS 20 Avalanche Energy, Single pulse (L=0.5mH) (Note 2) EAS 100 Power Dissipation TC=25ć PD TC=100ć 52 20.8 Power Dissipation TA=25ć 2 PD TA=100ć 1.