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KDD3680 - 100V N-Channel Power Trench MOSFET

Key Features

  • 25 A, 100 V. RDS(ON) = 46m @ VGS = 10 V RDS(ON) = 51m @ VGS = 6 V Low gate charge (38 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1. Gate 2. Drain 3. Source.

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SMD Type TransistIoCrs 100V N-Channel Power Trench MOSFET KDD3680 Features 25 A, 100 V. RDS(ON) = 46m @ VGS = 10 V RDS(ON) = 51m @ VGS = 6 V Low gate charge (38 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1. Gate 2. Drain 3.