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IRLML2502 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 20V.
  • ID = 4.2 A.
  • RDS(ON) ＜ 45mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 80mΩ (VGS = 2.5V).
  • Fast Switching G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipati.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel MOSFET IRLML2502 (KRLML2502) MOSFET ■ Features ● VDS (V) = 20V ● ID = 4.2 A ● RDS(ON) ＜ 45mΩ (VGS = 4.5V) ● RDS(ON) ＜ 80mΩ (VGS = 2.5V) ● Fast Switching G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Ta=25℃ Ta=70℃ Ta=25℃ Ta=70℃ Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 20 ±12 4.2 3.4 33 1.25 0.8 0.