Datasheet4U Logo Datasheet4U.com

H8050 - NPN Transistors

Features

  • s.
  • Collector Power Dissipation: PC=0.5W.
  • Collector Current: IC=1.5A.
  • Comlementary to H8550 1.70 0.1 0.42 0.1 0.46 0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 25 5 1.5 0.5 150 -55 to +150 Unit V V V A W ℃ ℃.
  • Electrical Characteristics Ta = 25℃ Parameter Collec.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
H8050 NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices
H8050S NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices
H8025-126 Sensor Head Hamamatsu Photonic Systems

Other Datasheets by Kexin Semiconductor

Part Number Description

Full PDF Text Transcription

Click to expand full text
SMD Type NPN Tra nsistors H8050 Transistors ■ Features ● Collector Power Dissipation: PC=0.5W ● Collector Current: IC=1.5A ● Comlementary to H8550 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 25 5 1.5 0.
Published: |