FDV303N
Features
- VDS (V) = 25V
- ID = 0.68 A
- RDS(ON) ＜ 450mΩ (VGS = 4.5V)
- RDS(ON) ＜ 600mΩ (VGS = 2.7V)
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1 +0.05 -0.01
1.Gate 2.Source 3.Drain
0-0.1 +0.10.38
-0.1
- Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage
Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm)
Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range
Symbol VDS VGS
ID IDM PD Rth JA TJ Tstg
Rating 25 ±8
0.68 2
350 357 150 -55 to 150
Unit V
A m W ℃/W ℃
.kexin..cn 1
SMD Type
MOSFET
N-Channel MOSFET FDV303N...
