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FDS2672 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 200V.
  • ID = 3.9A (VGS = 10V).
  • RDS(ON) ＜ 70mΩ (VGS = 10V).
  • RDS(ON) ＜ 80mΩ (VGS = 6V) 5 6 7 8 SOP-8 4 3 2 1 +0.04 0.21 -0.02 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current -Continuous Pulsed Drain Current Single Pulse Avalanche Energy (Note.1) Power Dissipation (Note.2) (Note.3) Thermal Resistance. Junction-.

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SMD Type N-Channel MOSFET FDS2672 (KDS2672) MOSFET ■ Features ● VDS (V) = 200V ● ID = 3.9A (VGS = 10V) ● RDS(ON) ＜ 70mΩ (VGS = 10V) ● RDS(ON) ＜ 80mΩ (VGS = 6V) 5 6 7 8 SOP-8 4 3 2 1 +0.04 0.21 -0.02 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current -Continuous Pulsed Drain Current Single Pulse Avalanche Energy (Note.1) Power Dissipation (Note.2) (Note.3) Thermal Resistance.Junction- to-Ambient (Note.2) (Note.3) Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM EAS PD RthJA RthJC TJ Tstg Rating 200 ±20 3.9 50 37.5 2.5 1 50 125 25 150 -55 to 150 Note.