Datasheet4U Logo Datasheet4U.com

BSP126 - N-Channel MOSFET

Features

  • s.
  • VDS (V) = 250V.
  • ID = 350mA.
  • RDS(ON) < 7Ω @ VGS = 10V.
  • Direct interface to C-MOS, TTL,etc.
  • High-speed switching.
  • No secondary breakdown. D G D S SOT-223 6.50±0.2 3.00±0.1 4 10。 Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 1.6 ± 0.1 1.80 (max) 1 2 3 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain 0.02 ~ 0.1.
  • Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Unit Dra.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSP126 N-channel enhancement mode vertical D-MOS transistor NXP
BSP120 N-channel enhancement mode vertical D-MOS transistor NXP
BSP121 N-channel enhancement mode vertical D-MOS transistor NXP
BSP122 N-channel enhancement mode vertical D-MOS transistor NXP
BSP122 N-Channel MOSFET VBsemi

Other Datasheets by Kexin Semiconductor

Part Number Description
BSP20A NPN Silicon Epitaxial Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type TraMnOsiSsFtoErsT N-Channel MOSFET BSP126 (KSP126) ■ Features ● VDS (V) = 250V ● ID = 350mA ● RDS(ON) < 7Ω @ VGS = 10V ● Direct interface to C-MOS, TTL,etc. ● High-speed switching. ● No secondary breakdown. D G D S SOT-223 6.50±0.2 3.00±0.1 4 10。 Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 1.6 ± 0.1 1.80 (max) 1 2 3 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain 0.02 ~ 0.1 ■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 250 V VGS ±20 Continuous Drain Current ID 350 mA Pulsed Drain Current IDM 1.2 A Power Dissipation PD 1.5 W Thermal Resistance.Junction- to-Ambient (Note 1) Rth j-a 83.
Published: |