The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SMD Type
N-Channel MOSFET BSN20
MOSFET
■FFeeaatutureress
● TrenchMOS™ technology ● Very fast switching ● Logic level compatible ● Subminiature surface mount package.
d
g s
+0.1 2.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
1
2
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.1 1.3 -0.1
+0.1 0.97 -0.1
0.55
0.4
Unit: mm
0.1 +0.05 -0.01
1.Gate 2.Source 3.Drain
0-0.1 +0.1 0.38
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
S ym bo l
Rat ing
Un it
Drain-source voltage Gate-Source Voltage
VDS
50
V
V GS
±20
Continuous Drain Current
Ta = 25℃ ID
Ta = 100℃
173
110
mA
Pulsed Drain Current
IDM
700
Power dissipation
TA = 25℃
PD
0.
BSN20 Datasheet
