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SMD Type
TransistIoCrs
NPN General Purpose Transistors BCW65,BCW66
Features
For general AF applications. High current gain. Low collector-emitter saturation voltage.
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 79 Junction temperature Storage temperature Junction - soldering point
Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS
BCW65 BCW66 60 75 32 45 55 800 1 100 200 330 150 -65 to +150 215
Unit V V V mA A mA mA
mW
K/W
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.