Datasheet4U Logo Datasheet4U.com

BC869 - PNP Medium Power Transistor

Features

  • High current. Three current gain selections. 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -32 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -1 A Peak collector current ICM -2 A Peak base current IBM -200 mA Total power dissipation.
  • 1 and.
  • 2 0.5 W.
  • 1 and.
  • 3 Ptot 0.85 W.
  • 1 and.
  • 4 1.2 W Storage temperature Tstg -65 to +1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BC869 2A PNP medium power transistors nexperia
BC869 PNP medium power transistor NXP
BC869 PNP Transistor WILLAS
BC869 PNP Plastic-Encapsulate Transistor WEITRON
BC869 PNP Transistor JCET

Other Datasheets by Kexin Semiconductor

Part Number Description
BC860 PNP Transistors
BC860B PNP Transistors
BC860C PNP Transistors
BC868 NPN Medium Power Transistor
BC846AW NPN General Purpose Transistor

Full PDF Text Transcription

Click to expand full text
SMD Type Transistors PNP Medium Power Transistor BC869 Features High current. Three current gain selections. 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -32 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -1 A Peak collector current ICM -2 A Peak base current IBM -200 mA Total power dissipation *1 and *2 0.5 W *1 and *3 Ptot 0.85 W *1 and *4 1.
Published: |