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BAS216 - HIGH-SPEED SWITCHING DIODE

Key Features

  • Small ceramic SMD package High switching speed:max. 4 ns Continuous reverse voltage:max.75V Repetitive peak reverse voltage:max.85V Repetitive peak forward current:max. 500 mA. SOD110 Unit: mm cathode idenfifier Absolute Maximum Ratings Ta = 25 Parameter Continuous peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Symbol VRRM VR IF IFSM Non-repetitive peak forwrad current IFSM Total power dissipation Ptot Storage temperature Ts.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type HIGH-SPEED SWITCHING DIODE BAS216 Diodes Features Small ceramic SMD package High switching speed:max. 4 ns Continuous reverse voltage:max.75V Repetitive peak reverse voltage:max.85V Repetitive peak forward current:max. 500 mA. SOD110 Unit: mm cathode idenfifier Absolute Maximum Ratings Ta = 25 Parameter Continuous peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Symbol VRRM VR IF IFSM Non-repetitive peak forwrad current IFSM Total power dissipation Ptot Storage temperature Tstg Junction temperature Tj Note 1. Device mounted on an FR4 printed-circuit board. Conditions Note 1 square wave; Tj = 25 prior to surge; t=1 A t = 1 ms t=1s Tamb = 25 ;note 1 Min -65 Max Unit 85 V 75 V 250 mA 500 mA 4 1 0.