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AOI444 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 12 A (VGS = 10V).
  • RDS(ON) ＜ 60mΩ (VGS = 10V).
  • RDS(ON) ＜ 85mΩ (VGS = 4.5V) D 1 23 123 G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ Continuous Drain Current Tc=100℃ Ta=25℃ Pulsed Drain Current Avalanche Current Avalanche energy L=0.1mH Ta=70℃ Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Case Junction Temperature Storage Temperature Range.

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DIP Type N-Channel MOSFET AOI444 (KOI444) TO-251 MOSFET Unit:mm ■ Features ● VDS (V) = 60V ● ID = 12 A (VGS = 10V) ● RDS(ON) ＜ 60mΩ (VGS = 10V) ● RDS(ON) ＜ 85mΩ (VGS = 4.5V) D 1 23 123 G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ Continuous Drain Current Tc=100℃ Ta=25℃ Pulsed Drain Current Avalanche Current Avalanche energy L=0.1mH Ta=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Tc=25℃ Tc=100℃ Ta=25℃ Ta=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM IAS,IAR EAS,EAR PD RthJA RthJC TJ Tstg Rating 60 ±20 12 9 4 3 30 19 18 20 10 2.1 1.3 30 60 7.5 175 -55 to 175 Unit V A mJ W ℃/W ℃ www.kexin.com.