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AOD464 - N-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) =105V.
  • ID = 40A (VGS = 10V).
  • RDS(ON) ＜ 28mΩ (VGS = 10V) @20A.
  • RDS(ON) ＜ 31mΩ (VGS = 6V) TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax + 2.65 0.25 -0.1 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 +0 9.70 .2 -0.2 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 1 Gate 2 Drain 3 Source 4 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Paramet.

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SMD Type N-Channel Enhancement MOSFET AOD464 (KOD464) MOSFET ■ Features ● VDS (V) =105V ● ID = 40A (VGS = 10V) ● RDS(ON) ＜ 28mΩ (VGS = 10V) @20A ● RDS(ON) ＜ 31mΩ (VGS = 6V) TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax + 2.65 0.25 -0.1 + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 +0 9.70 .2 -0.2 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 1 Gate 2 Drain 3 Source 4 Drain ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.1mH TC=25℃ TC=100℃ Power Dissipation Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.