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2SK3637 - Silicon N-channel Power MOSFET

Key Features

  • Low on-resistance, low Qg High avalanche resistance + 5 .2 8 0.2 -0.2 + 8 .7 0.2 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm + 1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 5 1.27+0.1 -0.1 0.1max +0.2 2.54-0.2 +0.1 5.08-0.1 0.81+0.1 -0.1 2.54 + 2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 . 2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power di.

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SMD Type TransistIoCrs Silicon N-channel Power MOSFET 2SK3637 Features Low on-resistance, low Qg High avalanche resistance + 5 .2 8 0.2 -0.2 + 8 .7 0.2 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm + 1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 5 1.27+0.1 -0.1 0.1max +0.2 2.54-0.2 +0.1 5.08-0.1 0.81+0.1 -0.1 2.54 + 2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 . 2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperature Symbol Rating Unit VDSS 200 V VGSS 30 V ID 50 A IDP 200 A EAS 2 000 mJ 3 PD W 100 Tch 150 Tstg -55 to +150 www.kexin.com.