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2SK3574 - MOS Field Effect Transistor

Key Features

  • 4.5V drive available. Low on-state resistance, RDS(on)1 = 13.5m MAX. (VGS = 10 V, ID = 24A) Low gate charge QG = 22nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode Surface mount device available Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature.
  • PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp.
  • PD Tch Tstg TO-263 +0.2 4.57 +0.1 -0.2 1.

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SMD Type MOSFET MOS Field Effect Transistor 2SK3574 Features 4.5V drive available. Low on-state resistance, RDS(on)1 = 13.5m MAX. (VGS = 10 V, ID = 24A) Low gate charge QG = 22nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode Surface mount device available Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 +0.2 8.7 -0.2 +0.2 5.28 -0.2 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 Rating Unit 30 V 20 V 48 A 140 A 29 W 1.