Datasheet4U Logo Datasheet4U.com

2SK3456 - MOS Field Effect Transistor

Key Features

  • Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A) Gate voltage rating 30 V Low on-state resistance RDS(on) = 0.60 MAX. (VGS = 10 V, ID = 6.0 A) Avalanche capability ratings Surface mount package available +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta =.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3456 SWITCHING N-CHANNEL POWER MOSFET NEC
2SK345 N-Channel MOSFET Transistor Inchange Semiconductor
2SK345 Silicon N-Channel MOSFET Hitachi
2SK3450 N-Channel MOSFET Transistor Inchange Semiconductor
2SK3450-01 n-Channel Silicon Power MOSFET Fuji

Other Datasheets by Kexin Semiconductor

Part Number Description
2SK3458 MOS Field Effect Transistor
2SK3402 MOS Field Effect Transistor
2SK3402-Z N-Channel MOSFET
2SK3404 MOS Field Effect Transistor
2SK3405 MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOS Field Effect Transistor 2SK3456 MOSFET Features Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A) Gate voltage rating 30 V Low on-state resistance RDS(on) = 0.60 MAX. (VGS = 10 V, ID = 6.0 A) Avalanche capability ratings Surface mount package available +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.