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2SK3325 - MOS Field Effect Transistor

Key Features

  • Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) Gate voltage rating: 30 V Low on-state resistance RDS(on) = 0.85 Ù MAX. (VGS = 10 V, ID = 5.0 A) Avalanche capability ratings + 5 .2 8 0.2 -0.2 + 8 .7 0.2 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm + 1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 5 1.27+0.1 -0.1 0.1max +0.2 2.54-0.2 +0.1 5.08-0.1 0.81+0.1 -0.1 2.54 + 2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 . 2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta =.

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SMD Type TransistIoCrs MOS Field Effect Transistor 2SK3325 Features Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) Gate voltage rating: 30 V Low on-state resistance RDS(on) = 0.85 Ù MAX. (VGS = 10 V, ID = 5.0 A) Avalanche capability ratings + 5 .2 8 0.2 -0.2 + 8 .7 0.2 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm + 1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 5 1.27+0.1 -0.1 0.1max +0.2 2.54-0.2 +0.1 5.08-0.1 0.81+0.1 -0.1 2.54 + 2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 .