Datasheet4U Logo Datasheet4U.com

2SK3109 - MOS Field Effect Transistor

Key Features

  • Gate voltage rating 30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 5.0 A) Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) Avalanche capability rated Built-in gate protection diode Surface mount device available +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolut.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3109 N-Channel MOSFET NEC
2SK3109-AZ N-Channel MOSFET Transistor Inchange Semiconductor
2SK310 N-Channel MOSFET Transistor Inchange Semiconductor
2SK310 (2SK310 / 2SK311) SILICON N-CHANNEL MOS FET Hitachi Semiconductor
2SK3101 N-Channel 550V Power MOSFET VBsemi

Other Datasheets by Kexin Semiconductor

Part Number Description
2SK3111 MOS Field Effect Transistor
2SK3112 MOS Field Effect Transistor
2SK3116 MOS Field Effect Transistor
2SK3147S Silicon N-Channel MOSFET
2SK3012DSE N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOS Field Effect Transistor 2SK3109 MOSFET Features Gate voltage rating 30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 5.0 A) Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) Avalanche capability rated Built-in gate protection diode Surface mount device available +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.