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2SK2887 - N-Channel Silicon MOSFET

Key Features

  • Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Gate-source voltage (VGSS) guaranteed to be 30V. Easily designed drive circuits. Easy to parallel. +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +0.25 2.65 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power diss.

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SMD Type N-Channel Silicon MOSFET 2SK2887 MOSFICET Features Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Gate-source voltage (VGSS) guaranteed to be 30V. Easily designed drive circuits. Easy to parallel. +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +0.25 2.65 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% 2.3 4.60+0.15 -0.15 0.60+0.1 -0.