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2SD601A - Silicon NPN Transistor

Key Features

  • High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction tem.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type TransistIoCrs Silicon NPN Epitaxial Planer Type 2SD601A Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 7 100 200 200 150 -55 to +150 Unit V V V mA mA mW 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.