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2SD1048 - NPN Epitaxial Planar Silicon Transistors

Key Features

  • 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 20 15 5 0.7 1.5 200 125 -55 to +125 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain.

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SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistors 2SD1048 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Ultrasmall package allows miniaturization in end products. +0.1 2.4-0.1 Large current capacity (IC=0.7A) and low-saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 20 15 5 0.7 1.