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2SC4684 - Silicon NPN Transistor

Key Features

  • High DC current gain. +0.2 9.70 -0.2 Low collector saturation voltage. High power dissipation. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse.
  • Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature St.

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SMD Type Silicon NPN Epitaxial 2SC4684 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High DC current gain. +0.2 9.70 -0.2 Low collector saturation voltage. High power dissipation. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse * Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VCES VEBO IC ICP IB PC Rating 50 20 40 8 5 8 0.5 1.