2SC3392 - NPN Epitaxial Planar Silicon Transistors

Product Overview

Kexin

Part number	2SC3392
Manufacturer	Kexin
File Size	56.05 KB
Description	NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3392 Datasheet
Additional preview pages of the 2SC3392 datasheet.

+0.1 2.4-0.1 Adoption of FBET process. High breakdown voltage : VCEO=50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature.

📁 Similar Datasheet

2SC3392 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SC3390 - Silicon NPN Epitaxial Transistor (Hitachi Semiconductor)
2SC3391 - Silicon NPN Epitaxial Planar Transistor (Hitachi Semiconductor)
2SC3393 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SC3395 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo)
2SC3396 - SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR (Sanyo)
2SC3397 - PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS (Sanyo)
2SC3398 - PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS (Sanyo)

Other Datasheets by Kexin

Published: Oct 29, 2013 |