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2SB852 - High-gain Amplifier Transistor

Key Features

  • s.
  • Darlington connection for high DC current gain.
  • Built-in 4kΩ resistor between base and emitter. C B RBE 4kΩ +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 E 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1 Base 2 Emitter 3 Collector.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Diss.

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SMD Type Transistors High-gain Amplifier Transistor 2SB852 ■ Features ● Darlington connection for high DC current gain. ● Built-in 4kΩ resistor between base and emitter. C B RBE 4kΩ +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 E 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.